The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jun. 01, 2011
Kazuyoshi Honda, Osaka, JP;
Kunihiko Bessho, Osaka, JP;
Takashi Shimada, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The present invention provides a thin film manufacturing method which realizes stable, highly-efficient film formation using a nozzle-type evaporation source while avoiding unnecessary scattering and deposition of a film formation material before the start of the film formation. Used is a film forming apparatus including: an evaporation chamber; a film forming chamberin which a substrateis provided; an evaporation sourceholding a film formation materialand including an opening surface; a moving mechanismconfigured to cause the evaporation sourceto move; and a conductance variable structure. The film forming chamberand the evaporation chamberare evacuated. In a state where the differential pressure between these chambers can be secured by the conductance variable structure, the nonreactive gas is introduced to the evaporation chamberto adjust the pressure in the evaporation chamberto predetermined pressure or more. Thus, the evaporation of the film formation material is suppressed. In the same state as above, the nonreactive gas is introduced to the film forming chamberto adjust the pressure in the film forming chamberto the predetermined pressure or more. The conductance variable structureis activated to cancel the above state. Then, the evaporation sourceis moved by the moving mechanism, so that the opening surfaceis located close to the substrate. The pressure in each chamber is decreased to less than the predetermined pressure. Thus, the suppression of the evaporation of the film formation material is canceled, and the film formation is started.