The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jan. 26, 2012
Applicants:
Tetsuya Hattori, Konan, JP;
Takafumi Kimata, Gamagori, JP;
Yoshimasa Kobayashi, Nagoya, JP;
Inventors:
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/04 (2006.01); C04B 37/00 (2006.01); H01T 13/39 (2006.01); C04B 35/56 (2006.01); C04B 37/02 (2006.01); H01T 21/02 (2006.01); C04B 35/645 (2006.01);
U.S. Cl.
CPC ...
H01T 13/39 (2013.01); C04B 2235/404 (2013.01); C04B 2235/3817 (2013.01); C04B 37/001 (2013.01); C04B 2235/658 (2013.01); C04B 2237/36 (2013.01); C04B 2237/405 (2013.01); C04B 2235/80 (2013.01); C04B 35/5615 (2013.01); C04B 2235/3891 (2013.01); C04B 2235/77 (2013.01); C04B 2235/402 (2013.01); C04B 2235/428 (2013.01); C04B 35/5618 (2013.01); C04B 37/021 (2013.01); H01T 21/02 (2013.01); C04B 2237/343 (2013.01); C04B 35/645 (2013.01); C04B 2235/661 (2013.01); C04B 2235/48 (2013.01); C04B 2235/9607 (2013.01); C04B 2235/3843 (2013.01);
Abstract
The present invention provides a TiSiCbased material that exhibits excellent arc resistance, an electrode, a spark plug, and methods of manufacturing the same. A TiSiCbased material according to the present invention includes TiSiCas a main phase, the TiSiCbased material having a TiC content of 0.5 mass % or less and an open porosity of 0.5% or less. It may be preferable that 0 to 30 mol % of Si in the main phase TiSiCbe substituted with Al. A spark plug according to the present invention includes an electrode formed using the TiSiCbased material.