The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8876974 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 04, 2014

Filed:

Jul. 26, 2010
Applicant:

Myung Woo Han, Seoul, KR;

Inventor:

Myung Woo Han, Seoul, KR;

Assignee:

LIGADP Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45565 (2013.01); C23C 16/45572 (2013.01); C23C 16/45574 (2013.01);
Abstract

A chemical vapor deposition apparatus is equipped to control the width of a gas discharge path between a susceptor and an inner surface of a chamber without having to resort to redesign and remanufacturing of the apparatus. The chemical vapor deposition apparatus includes: a chamber; a susceptor positioned inside the chamber and on which a substrate can be loaded; a shower head injecting a processing gas toward the substrate; and a guide unit detachably installed inside the chamber to guide the processing gas such that the processing gas injected from the shower head is discharged through a chamber hole formed in the chamber.


Find Patent Forward Citations

Han, Myung. (2014). Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber (U.S. Patent No. 8876974). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8876974

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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