The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Jan. 05, 2012
Applicants:

Hiromitsu Kato, Tsukuba, JP;

Satoshi Yamasaki, Tsukuba, JP;

Hideyo Ookushi, Tsukuba, JP;

Shinichi Shikata, Tsukuba, JP;

Inventors:

Hiromitsu Kato, Tsukuba, JP;

Satoshi Yamasaki, Tsukuba, JP;

Hideyo Ookushi, Tsukuba, JP;

Shinichi Shikata, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01); C30B 28/14 (2006.01); B01J 3/06 (2006.01); B32B 9/00 (2006.01); C30B 29/04 (2006.01); C30B 25/10 (2006.01); C30B 29/40 (2006.01); C30B 25/02 (2006.01); C30B 25/20 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C30B 25/105 (2013.01); C30B 25/18 (2013.01); C30B 29/40 (2013.01); C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/04 (2013.01); H01L 21/02376 (2013.01); H01L 21/02433 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01);
Abstract

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.


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