The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Sep. 13, 2011
Applicant:

Motoki Kakui, Yokohama, JP;

Inventor:

Motoki Kakui, Yokohama, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/067 (2006.01); H01S 5/042 (2006.01); B23K 26/36 (2014.01); B23K 26/40 (2014.01); B23K 26/073 (2006.01); B23K 26/00 (2014.01); H01L 27/142 (2014.01); H01S 3/23 (2006.01); H01S 3/16 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0427 (2013.01); B23K 26/365 (2013.01); H01S 3/06754 (2013.01); B23K 26/4005 (2013.01); H01S 3/2308 (2013.01); B23K 26/0732 (2013.01); Y02E 10/50 (2013.01); H01S 2301/20 (2013.01); B23K 26/409 (2013.01); B23K 26/0063 (2013.01); H01S 3/1618 (2013.01); H01L 27/1425 (2013.01);
Abstract

The present invention relates to a method of processing a metal thin film formed on a transparent substrate by radiating pulsed light onto the metal thin film, and having the steps of repeatedly outputting the pulsed light by directly modulating a semiconductor laser of the seed light source in accordance with electric signals, amplifying the pulsed light using an optical amplifier including an optical amplification medium, controlling the full width at half maximum of the pulsed light that is amplified and outputted by the optical amplifier to be 0.5 ns or less, and removing the metal thin film by radiating the pulsed light thus having the controlled full width at half maximum onto the metal thin film through the transparent substrate.


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