The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 17, 2012
SK Hynix Inc., Icheon-si, KR;
Tae Heui Kwon, Seoul, KR;
Hwang Huh, Cheonju-si, KR;
SK Hynix Inc., Icheon-Si, KR;
Abstract
A semiconductor memory device and a method of manufacturing the same are provided. The device includes a memory block and one or more peripheral circuits. The memory block includes a bit line, a common source line, a vertical channel layer coupled between the bit line and the common source line, word lines surrounding the bit line at different heights from a semiconductor substrate, and memory cells formed in portions where the word lines surround the vertical channel layer. The one or more peripheral circuits are configured to set the word lines to a floating state to supply holes to the vertical channel layer when a precharge voltage is applied to the common source line, and set word lines of memory cells to be erased to a ground state when an erase voltage is applied to the common source line.