The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Mar. 04, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Mizuki Kaneko, Kanagawa, JP;
Takeshi Hioka, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device includes memory cells and a voltage generating circuit for generating a voltage for memory cells. The first voltage generating circuit includes a first diode connected between first and second nodes, a first transistor connected between the output terminal and a third node and having a gate connected to the second node, a second transistor connected between the third node and a fourth node and having a gate connected to the second node, a third transistor connected between the output terminal and the first node and having a gate connected to the fourth node, a second diode connected between the first and fourth nodes, and a charge pump circuit configured to supply a voltage to the fourth node. The first voltage generating circuit functions to adjust the generated voltage when it overshoots a desired value which may be caused by capacitive coupling with adjacent wirings.