The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Feb. 17, 2012
Applicant:
Tatsuya Okamoto, Mie-ken, JP;
Inventor:
Tatsuya Okamoto, Mie-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); H01L 29/788 (2006.01); H01L 21/765 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7881 (2013.01); G11C 7/02 (2013.01); H01L 21/765 (2013.01); H01L 27/11521 (2013.01); H01L 29/42336 (2013.01);
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a first memory string including a first memory cell and a second memory cell aligned along a first axis, a source contact provided at a source-side end of the first memory string, a second memory string that extends along the first axis and includes a third memory cell that aligns with the first memory cell along a second axis perpendicular to the first axis, and a shield conductive layer. The shield conductive layer extends along the first axis between the first memory string and the second memory string and is electrically connected to the source contact.