The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 09, 2013
Applicant:
Digitaloptics Corporation Mems, Arcadia, CA (US);
Inventors:
Roman C. Gutierrez, Arcadia, CA (US);
Ankur Jain, Arcadia, CA (US);
Assignee:
DigitalOptics Corporation MEMS, Arcadia, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 7/00 (2006.01); H02N 2/00 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
H02N 2/005 (2013.01); B81B 2203/0154 (2013.01); B81B 2207/07 (2013.01); B81B 2201/033 (2013.01); B81B 7/0006 (2013.01);
Abstract
A device may comprise a flexure formed of a first semiconductor material. A first trench may be formed in the flexure. The first trench may separate the first semiconductor material into a first portion and a second portion thereof. An oxide layer may be formed in the first trench. The oxide layer may extend over a top portion of the first semiconductor material. A second semiconductor material may be formed on the oxide layer. The first trench and the oxide layer may cooperate to electrically isolate the first portion and the second portion from one another.