The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Sep. 29, 2010
Applicants:
Gerald Dallmann, Dresden, DE;
Heike Rosslau, Langebrueck, DE;
Norbert Urbansky, Dresden, DE;
Scott Wallace, Mortizburg, DE;
Inventors:
Gerald Dallmann, Dresden, DE;
Heike Rosslau, Langebrueck, DE;
Norbert Urbansky, Dresden, DE;
Scott Wallace, Mortizburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/44 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01006 (2013.01); H01L 2224/05558 (2013.01); H01L 23/53223 (2013.01); H01L 21/7685 (2013.01); H01L 24/48 (2013.01); H01L 2924/01029 (2013.01); H01L 23/53252 (2013.01); H01L 2224/03462 (2013.01); H01L 24/03 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/0345 (2013.01); H01L 2924/01073 (2013.01); H01L 2224/05624 (2013.01); H01L 21/76843 (2013.01); H01L 2224/05147 (2013.01); H01L 2924/01033 (2013.01); H01L 2224/03452 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01005 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/05644 (2013.01); H01L 24/05 (2013.01); H01L 21/76867 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01012 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/0103 (2013.01); H01L 2224/0508 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01047 (2013.01); H01L 21/76873 (2013.01); H01L 24/85 (2013.01); H01L 2224/85375 (2013.01); H01L 2224/48 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05666 (2013.01); H01L 2924/0105 (2013.01); H01L 2224/051 (2013.01); H01L 2924/01023 (2013.01);
Abstract
One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element, the first element and the second element of the passivation layer coming from the structure.