The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Sep. 07, 2012
Hiroyuki Irifune, Hyogo-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Yasuto Sumi, Hyogo-ken, JP;
Kiyoshi Kimura, Hyogo-ken, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Junji Suzuki, Hyogo-ken, JP;
Hiroyuki Irifune, Hyogo-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Yasuto Sumi, Hyogo-ken, JP;
Kiyoshi Kimura, Hyogo-ken, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Junji Suzuki, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third diffusion layers are the same.