The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 16, 2013
Fuji Electric Co., Ltd., Kawasaki, JP;
Takayuki Shimatou, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A semiconductor device includes element active portion X and element peripheral portion Y. An interlayer insulating film is formed on upper surfaces of portions X and Y. A source electrode connected to a p base region and n-type source region and a gate metal wiring formed annularly surrounding the source electrode are formed on element active portion X side upper surface of the interlayer insulating film. The gate metal wiring connects to a gate electrode. An organic protective film with openings is formed on a first main surface side upper surface of the semiconductor substrate, and the openings serve as a gate electrode pad partially exposing the gate metal wiring and a source electrode pad partially exposing the source electrode. An inorganic protective film formed between the gate metal wiring and the organic protective film covers the gate metal wiring. The semiconductor device is highly reliable.