The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Oct. 17, 2012
Applicant:
Imec, Leuven, BE;
Inventor:
Clement Merckling, Schaerbeek, BE;
Assignee:
IMEC, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 28/40 (2013.01); H01L 29/20 (2013.01); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01);
Abstract
The present invention is related to a method for manufacturing a low defect interface between a dielectric material and an III-V compound. More specifically, the present invention relates to a method for manufacturing a passivated interface between a dielectric material and an III-V compound. The present invention is also directed to a device comprising a low defect interface between a dielectric material and an III-V compound that has improved performance.