The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
May. 09, 2013
Hitachi, Ltd., Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention provides a technique capable of realizing a silicon carbide semiconductor device having high performance and high reliability. By constituting a channel region by an n-type, intrinsic, or p-type channel region and a p-type channel region, a high channel mobility and a high threshold voltage are realized. Further, by constituting a source region by an n-type source region and an n-type source region, and forming the n-type source region between the p-type channel region and the n-type source region, an electric field in the p-type channel region is relaxed to suppress deterioration of a gate insulating film, and also by electrically connecting a source wiring electrode to the n-type source region, a contact resistance is decreased.