The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Apr. 06, 2010
Applicants:

Aaron D. Franklin, Croton on Hudson, NY (US);

Timothy D. Sands, West Lafayette, IN (US);

Timothy S. Fisher, West Lafayette, IN (US);

David B. Janes, West Lafayette, IN (US);

Inventors:

Aaron D. Franklin, Croton on Hudson, NY (US);

Timothy D. Sands, West Lafayette, IN (US);

Timothy S. Fisher, West Lafayette, IN (US);

David B. Janes, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.


Find Patent Forward Citations

Franklin, Aaron. (2014). Field effect transistor fabrication from carbon nanotubes (U.S. Patent No. 8872154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8872154

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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