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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8871670 B1

PDFFull Text
Date of Patent:
Oct. 28, 2014

Filed:

Jan. 04, 2012

Defect engineering in metal oxides via surfaces

Applicant:

Edmund G. Seebauer, Urbana, IL (US);

Inventor:

Edmund G. Seebauer, Urbana, IL (US);

Assignee:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Attorney:

Lathrop & Gage LLP

Primary Examiner:

Melvin C Mayes

Assistant Examiner:

Stefanie Cohen

Int. Cl.
CPC ...
B01J 23/00 (2006.01); B01J 23/02 (2006.01); B82Y 30/00 (2011.01); H01L 21/3105 (2006.01); B01J 27/08 (2006.01); B01J 27/20 (2006.01); B01J 27/24 (2006.01); B01J 23/16 (2006.01); H01L 21/425 (2006.01); B01J 21/06 (2006.01); B01J 35/00 (2006.01); B01J 37/34 (2006.01); B01J 37/02 (2006.01); B01J 27/14 (2006.01); H01L 21/465 (2006.01); B01J 23/06 (2006.01); B01J 27/10 (2006.01); B01J 23/38 (2006.01); B01J 27/12 (2006.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); H01L 21/3105 (2013.01); B01J 27/08 (2013.01); B01J 27/20 (2013.01); B01J 27/24 (2013.01); B01J 23/16 (2013.01); H01L 21/425 (2013.01); B01J 21/063 (2013.01); B01J 35/004 (2013.01); B01J 37/348 (2013.01); B01J 37/0207 (2013.01); B01J 27/14 (2013.01); B01J 35/002 (2013.01); H01L 21/465 (2013.01); B01J 23/06 (2013.01); B01J 27/10 (2013.01); B01J 23/38 (2013.01); B01J 27/12 (2013.01);
Abstract

The present invention provides methods for controlling defects in materials, including point defects, such as interstitials and vacancies, and extended defects, including dislocations and clusters. Defect control provided by the present invention allows for fabrication and processing of materials and/or structures having a selected abundance, spatial distribution and/or concentration depth profile of one or more types of defects in a material, such as vacancies and/or interstitials in a crystalline material. Methods of the invention are useful for processing materials by controlling defects to access beneficial physical, optical, chemical and/or electronic properties.

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