The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 03, 2012
Applicant:
Åac Microtec Ab, Uppsala, SE;
Inventor:
Peter Nilsson, Solna, SE;
Assignee:
ÅAC Microtec AB, Uppsala, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/498 (2006.01); H01L 23/48 (2006.01); H05K 3/40 (2006.01); B81C 1/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01); H05K 1/03 (2006.01); H05K 3/00 (2006.01); H05K 3/42 (2006.01);
U.S. Cl.
CPC ...
H05K 3/4076 (2013.01); H01L 23/49827 (2013.01); H01L 23/481 (2013.01); H05K 1/0306 (2013.01); H05K 3/0041 (2013.01); H01L 2924/09701 (2013.01); B81B 2207/07 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06513 (2013.01); H05K 3/42 (2013.01); H05K 2201/09827 (2013.01); B81C 1/00095 (2013.01); H05K 2201/09854 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/0002 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/76898 (2013.01); H05K 3/002 (2013.01);
Abstract
The present invention provides a wafer () comprising a through-wafer via () through the wafer () formed by a through-wafer via hole () and at least a first conductive coating (). A substantially vertical sidewall () of the through-wafer via hole () except for a constriction () provides a reliable through-wafer via () occupying a small area on the wafer. The wafer () is preferably made of a semiconductor material, such as silicon, or a glass ceramic. A method for manufacturing such a wafer () is described.