The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Dec. 17, 2012
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Nam-Jae Lee, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); H01L 21/7682 (2013.01); H01L 27/10888 (2013.01); H01L 23/5226 (2013.01); H01L 21/76838 (2013.01); H01L 27/10885 (2013.01); H01L 23/53295 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming a first interlayer dielectric layer having a conductive contact, forming a sacrifice layer having a conductive interconnection over the first interlayer dielectric layer such that the conductive interconnection is contacted with the conductive contact, removing the sacrifice layer, and forming a recess by removing a part of the conductive contact exposed by the conductive interconnection.
Lee, Nam-Jae. (2014). Semiconductor device and method for fabricating the same (U.S. Patent No. 8871638). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8871638
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile