The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Nov. 02, 2010
Applicant:

Kenichi Fuse, Hadano, JP;

Inventor:

Kenichi Fuse, Hadano, JP;

Assignee:

Empire Technology Development LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/47 (2006.01); H01L 25/065 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0557 (2013.01); H01L 23/481 (2013.01); H01L 2224/06181 (2013.01); H01L 2225/06541 (2013.01); H01L 24/06 (2013.01); H01L 2225/06513 (2013.01);
Abstract

Techniques described herein generally relate to laminated semiconductor structures. In some examples, method of forming a polyimide film are described. An example method may include forming a through hole in a laminated semiconductor structure that includes multiple stacked semiconductor layers. An inner wall of the laminated semiconductor structure can define the through hole. The inner wall can be exposed to a solution including a salt of polyamic acid and/or a polyamic acid that can be precipitated on the inner wall. The precipitated polyamic acid on the inner wall can be transformed into a polyimide film substantially coating the inner wall.


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