The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Apr. 11, 2014
Applicant:

Sandisk Corporation, Milpitas, CA (US);

Inventors:

Jian Chen, Sunnyvale, CA (US);

Karen Chu Cruden, Pleasanton, CA (US);

Xiangfeng Duan, Los Angeles, CA (US);

Chao Liu, San Jose, CA (US);

J. Wallace Parce, Palo Alto, CA (US);

Assignee:

SanDisk Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/28 (2006.01); H01L 21/3105 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/28229 (2013.01); B82Y 30/00 (2013.01); Y10S 977/855 (2013.01); Y10S 977/774 (2013.01); Y10S 977/89 (2013.01); B82Y 40/00 (2013.01); H01L 21/3105 (2013.01); H01L 21/28008 (2013.01); B82Y 10/00 (2013.01); Y10S 977/782 (2013.01); H01L 21/28273 (2013.01); Y10S 977/845 (2013.01); Y10S 977/891 (2013.01);
Abstract

Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.


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