The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
May. 26, 2011
Masanori Tsukamoto, Kanagawa, JP;
Masanori Tsukamoto, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device includes: forming a first gate insulating film on a semiconductor substrate in first and second regions in an active area; forming first gate electrodes on the first gate insulating film in the first and second regions; forming source/drain regions by introducing impurities at both sides of the first gate electrode in the first and second regions; performing heat treatment of activating the impurities; forming a stress liner film so as to cover the whole surface of first gate electrodes in the first and second regions; removing the stress liner film at an upper portion of the first gate electrode in the second region while allowing the stress liner film at least at a portion in the first region to remain to expose the upper portion of the first gate electrode in the second region; forming a groove by removing the first gate electrode in the second region; and forming a second gate electrode in the groove.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile