The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Nov. 04, 2011
Hyun-soo Shin, Suwon-si, KR;
Yeon-gon MO, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Jin-seong Park, Suwon-si, KR;
Hun-jung Lee, Suwon-si, KR;
Jong-han Jeong, Suwon-si, KR;
Hyun-soo Shin, Suwon-si, KR;
Yeon-gon Mo, Suwon-si, KR;
Jae-kyeong Jeong, Suwon-si, KR;
Jin-seong Park, Suwon-si, KR;
Hun-jung Lee, Suwon-si, KR;
Jong-han Jeong, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.