The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Aug. 29, 2008
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Abstract
A method for fabricating butt-coupled electro-absorptive modulators is disclosed. A butt-coupled electro-absorptive modulator with minimal dislocations in the electro-absorptive material is produced by adding a dielectric spacer for lining the coupling region before epitaxially growing the SiGe or other electro-absorptive material. It has been determined that during the SiGe growth, the current process has exposed single crystal silicon at the bottom of the hole and exposed amorphous silicon on the sides. SiGe growth on the amorphous silicon is expected to have more dislocations than single crystal silicon. There should also be dislocations or fissures where the SiGe growth from the each nucleation source finally join. Thus, a dielectric sidewall can protect an exposed waveguide face from any etching from an aggressive surface preparation prior to epi growth.