The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Feb. 09, 2011
Satoshi Tokuda, Kusatsu, JP;
Koichi Tanabe, Uji, JP;
Toshinori Yoshimuta, Takatsuki, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto-fu, JP;
Akina Yoshimatsu, Osaka, JP;
Toshiyuki Sato, Kyoto, JP;
Shoji Kuwabara, Ibaraki, JP;
Satoshi Tokuda, Kusatsu, JP;
Koichi Tanabe, Uji, JP;
Toshinori Yoshimuta, Takatsuki, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto-fu, JP;
Akina Yoshimatsu, Osaka, JP;
Toshiyuki Sato, Kyoto, JP;
Shoji Kuwabara, Ibaraki, JP;
Shimadzu Corporation, Kyoto, JP;
Institute of National Colleges of Technology, Japan, Tokyo, JP;
Abstract
Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.