The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8871408 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 28, 2014

Filed:

Sep. 05, 2012
Applicants:

Yoko Takekawa, Tokyo, JP;

Masafumi Asano, Kanagawa, JP;

Yingkang Zhang, Kanagawa, JP;

Kazuhiro Takahata, Kanagawa, JP;

Tomoko Ojima, Tokyo, JP;

Inventors:

Yoko Takekawa, Tokyo, JP;

Masafumi Asano, Kanagawa, JP;

Yingkang Zhang, Kanagawa, JP;

Kazuhiro Takahata, Kanagawa, JP;

Tomoko Ojima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/68 (2012.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.


Find Patent Forward Citations

Takekawa, Yoko. (2014). Mask pattern creation method, recording medium, and semiconductor device manufacturing method (U.S. Patent No. 8871408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8871408

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