The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Nov. 28, 2011
Applicant:
Yasushi Ogimoto, Higashiyamoto, JP;
Inventor:
Yasushi Ogimoto, Higashiyamoto, JP;
Assignee:
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 1/01 (2006.01); G02B 1/10 (2006.01); H01L 45/00 (2006.01); H01L 43/10 (2006.01); C30B 23/06 (2006.01); C30B 29/22 (2006.01);
U.S. Cl.
CPC ...
H01F 1/01 (2013.01); H01L 45/1625 (2013.01); H01L 43/10 (2013.01); C30B 23/066 (2013.01); C30B 29/22 (2013.01); G02B 1/10 (2013.01); H01L 45/147 (2013.01); H01L 45/04 (2013.01);
Abstract
An article including a perovskite manganese oxide thin film is composed of a substrate; and a perovskite manganese oxide thin film formed on the substrate and having an orientation that is an (m) orientation where 19≧m≧2. When m is 2 the perovskite manganese oxide thin film has a (210) orientation. The invention provides a perovskite manganese oxide thin film having a transition temperature at room temperature or above, which is higher than that of the bulk oxide, by exploiting the substrate strain and the symmetry of the crystal lattice.