The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
May. 28, 2010
Gang Han, Yasugi, JP;
Shujiroh Uesaka, Yasugi, JP;
Tatsuya Shoji, Yasugi, JP;
Mariko Fukumaru (Nee Abe), Yasugi, JP;
Maher I. Boulos, Sherbrooke, CA (US);
Jiayin Guo, Sherbrooke, CA (US);
Jerzy Jurewicz, Sherbrooke, CA (US);
Gang Han, Yasugi, JP;
Shujiroh Uesaka, Yasugi, JP;
Tatsuya Shoji, Yasugi, JP;
Mariko Fukumaru (nee ABE), Yasugi, JP;
Maher I. Boulos, Sherbrooke, CA (US);
Jiayin Guo, Sherbrooke, CA (US);
Jerzy Jurewicz, Sherbrooke, CA (US);
Hitachi Metals, Ltd., Tokyo, JP;
Tekna Plasma Systems Inc., Quebec, CA;
Abstract
Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C.