The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Oct. 14, 2013
Applicant:

The Trustees of Columbia University IN the City of New York, New York, NY (US);

Inventor:

James S. Im, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/00 (2006.01); C30B 3/00 (2006.01); C30B 5/00 (2006.01); C30B 28/02 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01); C30B 29/06 (2006.01); C30B 13/24 (2006.01); H01L 21/322 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3221 (2013.01); H01L 31/1804 (2013.01); H01L 31/0236 (2013.01); H01L 21/02686 (2013.01); H01L 21/02609 (2013.01); Y02E 10/547 (2013.01); H01L 31/1872 (2013.01); H01L 21/02532 (2013.01); C30B 29/06 (2013.01); C30B 13/24 (2013.01);
Abstract

The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a thick crystalline film includes providing a film for crystallization on a substrate, wherein at least a portion of the substrate is substantially transparent to laser irradiation, said film including a seed layer having a predominant surface crystallographic orientation; and a top layer disposed above the seed layer; irradiating the film from the back side of the substrate using a pulsed laser to melt a first portion of the top layer at an interface with the seed layer while a second portion of the top layer remains solid; and re-solidifying the first portion of the top layer to form a crystalline laser epitaxial with the seed layer thereby releasing heat to melt an adjacent portion of the top layer.


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