The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Oct. 16, 2012
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Hari M. Rao, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Siamack Haghighi, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 8/08 (2006.01); G11C 11/16 (2006.01); G11C 8/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01); G11C 2213/79 (2013.01); G11C 13/0028 (2013.01); G11C 8/08 (2013.01); G11C 8/16 (2013.01); G11C 2213/74 (2013.01);
Abstract
A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device includes a plurality of memory cells. At least one of the memory cells includes a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element. Each of the first non-volatile memory and the second non-volatile memory is accessible via multiple ports.