The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jul. 01, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 2224/05166 (2013.01); H01L 24/03 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/05083 (2013.01); H01L 24/05 (2013.01); H01L 2224/05184 (2013.01); H01L 2924/01047 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2924/01033 (2013.01); H01L 2224/04042 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/04026 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/10329 (2013.01); H01L 21/6836 (2013.01); H01L 2224/05639 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01005 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/01072 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05099 (2013.01); H01L 2924/014 (2013.01); H01L 2924/13055 (2013.01); H01L 21/02057 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05005 (2013.01);
Abstract
A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silicide layer disposed on the bottom surface. The metal silicide layer is less than about five atomic layers in thickness. A first metal layer is disposed over the metal silicide layer such that a metal of the first metal layer is the same as a metal of the metal silicide layer.