The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Nov. 06, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Daniel Tekleab, Wappingers Falls, NY (US);
Hung H. Tran, Hopewell Junction, NY (US);
Jeffrey W. Sleight, Ridgefield, CT (US);
Dureseti Chidambarrao, Weston, CT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); B82Y 10/00 (2013.01); H01L 29/775 (2013.01); H01L 29/66666 (2013.01); H01L 29/66439 (2013.01); H01L 29/0676 (2013.01); H01L 29/7827 (2013.01);
Abstract
A nanotubular MOSFET device extends a scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner and outer gate separated from each other by a tubular shaped epitaxially grown silicon layer, and a source and drain respectively separated by spacers surrounding the tubular inner and outer gates.