The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Nov. 07, 2012
Applicant:
Masahiko Kubo, Hyogo, JP;
Inventor:
Masahiko Kubo, Hyogo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/732 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 29/0804 (2013.01); H01L 29/66295 (2013.01); H01L 21/28 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/732 (2013.01);
Abstract
A semiconductor device implemented with structures to suppress leakage current generation during operation and a method of making the same is provided. The semiconductor device includes a semiconductor substrate of first conductivity type, a second insulation film, which has at least one aperture between first and second apertures, formed on top of a first insulation film. The semiconductor device layer structure accommodates tensile stress differences between device layers to suppress lattice dislocation defects during device manufacturing and thus improves device reliability and performance.