The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Sep. 15, 2011
Applicants:
Tanya Trajkovic, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Nishad Udugampola, Cambridge, GB;
Inventors:
Tanya Trajkovic, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Vasantha Pathirana, Cambridge, GB;
Nishad Udugampola, Cambridge, GB;
Assignee:
Cambridge Semiconductor Limited, Cambridge, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/66325 (2013.01); H01L 29/7816 (2013.01); H01L 29/7393 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01); H01L 29/7824 (2013.01); H01L 29/1033 (2013.01); H01L 29/1045 (2013.01); H01L 29/7835 (2013.01); H01L 29/42368 (2013.01);
Abstract
We describe a RESURF semiconductor device having an n-drift region with a p-top layer and in which a MOS (Metal Oxide Semiconductor) channel of the device is formed within the p-top layer.