The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Oct. 18, 2012
Applicants:

Margaret H. Abraham, Portola Valley, CA (US);

David P. Taylor, Hawthorne, CA (US);

Inventors:

Margaret H. Abraham, Portola Valley, CA (US);

David P. Taylor, Hawthorne, CA (US);

Assignee:

The Aerospace Corporation, El Segundo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); B82Y 30/00 (2011.01); H01L 21/306 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); B82Y 30/00 (2013.01); B81C 2201/0143 (2013.01); B81C 1/00547 (2013.01); B81C 1/00047 (2013.01);
Abstract

Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.


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