The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Sep. 23, 2011
Applicants:

Jaehyok Ko, Hwaseong-si, KR;

Hangu Kim, Seongnam-si, KR;

Changsu Kim, Hwaseong-si, KR;

Dongryul Chang, Suwon-si, KR;

Minchang Ko, Hwaseong-si, KR;

Inventors:

Jaehyok Ko, Hwaseong-si, KR;

Hangu Kim, Seongnam-si, KR;

ChangSu Kim, Hwaseong-si, KR;

Dongryul Chang, Suwon-si, KR;

Minchang Ko, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01);
Abstract

A diode includes a first region having a first conductive type impurity and formed in a first well having the first conductive type impurity, a second region formed in the first well and having a second conductive type impurity, and a semiconductor pattern disposed above the first well and including a first portion having the first conductive type impurity and a second portion having the second conductive type impurity. The first region and the first portion are coupled with an anode, and the second region and the second portion are coupled with a cathode.


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