The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Dec. 12, 2011
Applicants:

Leonard Forbes, Corvallis, OR (US);

Kie Y. Ahn, Chappaqua, NY (US);

Inventors:

Leonard Forbes, Corvallis, OR (US);

Kie Y. Ahn, Chappaqua, NY (US);

Assignee:

Micro Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/792 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/513 (2013.01);
Abstract

A dielectric structure may be arranged having a thin nitrided surface of an insulator with a charge blocking insulator over the nitrided surface. The insulator may be formed of a number of different insulating materials such as a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. In an embodiment, the dielectric structure may be formed by nitridation of a surface of an insulator using ammonia and deposition of a blocking insulator having a larger band gap than the insulator. The dielectric structure may form part of a memory device, as well as other devices and systems.


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