Semiconductor devices including vertical transistors and methods of fabricating the same

Abstract

A semiconductor device includes a first capacitor in a trench of a semiconductor substrate and an active pillar disposed on the semiconductor substrate opposite the first capacitor. The active pillar includes first region, first channel region, second region, second channel region and third region, sequentially stacked. A pillar connection pattern electrically connects the first capacitor to a first source region. A first gate electrode is disposed on a sidewall of the first channel region. A common drain region is disposed in the second region, and a common bit line is disposed on a sidewall of the common drain region. A second gate electrode is disposed on a sidewall of the second channel region, and a second source region is disposed in the third region. A second capacitor is disposed on a top surface of the second source region opposite the second channel region.