The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Sep. 24, 2007
Applicants:
Shinya Naito, Gifu, JP;
Hideaki Fujiwara, Hashima, JP;
Toru Dan, Gifu, JP;
Inventors:
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 29/08 (2006.01); H01L 29/737 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8249 (2013.01); H01L 29/78 (2013.01); H01L 27/0623 (2013.01); H01L 29/0821 (2013.01); H01L 29/7378 (2013.01); H01L 29/66242 (2013.01); H01L 29/0804 (2013.01);
Abstract
A semiconductor device (npn bipolar transistor) includes an n-type collector layer, a base layer constituted by a pdiffusion layer, a SiGe layer and a p-type silicon film, an n-type emitter layer and a charge transport prevention film formed between the n-type collector layer and the n-type emitter layer and having an effect as a potential barrier with respect to either electrons or holes.