The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Oct. 12, 2012
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyoung Won Na, Seoul, KR;
Pil-Kyu Kang, Anyang-si, KR;
Seong Gu Kim, Pyeongtaek-si, KR;
Yong Hwack Shin, Yeonsu-gu, KR;
Ho-Chul Ji, Yongin-si, KR;
Jung Hyung Pyo, Hwaseong-si, KR;
Kyoung Ho Ha, Seoul, KR;
Abstract
A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.