The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Sep. 30, 2010
Applicant:

Mitsuhiko Ogihara, Gunma, JP;

Inventor:

Mitsuhiko Ogihara, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 25/075 (2006.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/0079 (2013.01); H01L 33/42 (2013.01); H01L 33/20 (2013.01); H01L 25/0753 (2013.01); H01L 33/38 (2013.01); H01L 2224/48091 (2013.01); H01L 33/44 (2013.01);
Abstract

A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single crystal semiconductor thin film and is connected to a first conductive side metal layer. The first conductive side metal layer is closer to the surface of the substrate than a top surface of the single crystal semiconductor thin film. A second conductive electrode is formed on the single crystal semiconductor thin film. A second conductive side metal layer is connected to the second conductive electrode. The second conductive side metal layer is closer to the surface of the substrate than the top surface of the single crystal semiconductor thin film.


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