The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Dec. 08, 2011
Applicants:

Shih-cheng Huang, Hsinchu, TW;

Po-min Tu, Chiayi County, TW;

Ying-chao Yeh, Taipei County, TW;

Wen-yu Lin, Taichung County, TW;

Peng-yi Wu, Taichung County, TW;

Shih-hsiung Chan, Hsinchu County, TW;

Inventors:

Shih-Cheng Huang, Hsinchu, TW;

Po-Min Tu, Chiayi County, TW;

Ying-Chao Yeh, Taipei County, TW;

Wen-Yu Lin, Taichung County, TW;

Peng-Yi Wu, Taichung County, TW;

Shih-Hsiung Chan, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/15 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/02505 (2013.01); H01L 33/007 (2013.01); H01S 2304/12 (2013.01); H01S 5/32341 (2013.01); H01L 21/02656 (2013.01); H01L 21/02458 (2013.01); H01S 2301/173 (2013.01);
Abstract

A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.


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