The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
May. 15, 2013
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventor:
Hideki Hayashi, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/7393 (2013.01); H01L 29/0696 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A collector layer is made of silicon carbide having a first conductivity type. A switching element is provided on the collector layer. The switching element includes a junction gate for controlling a channel having a second conductivity type different from the first conductivity type.
Hayashi, Hideki. (2014). Silicon carbide semiconductor device (U.S. Patent No. 8866155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8866155
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile