The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Mar. 14, 2013
Applicant:

Wisconsin Alumni Research Foundation, Madison, WI (US);

Inventors:

Zhenqiang Ma, Middleton, WI (US);

Jung-Hun Seo, Madison, WI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01);
Abstract

Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material. Also provided are devices incorporating the heterojunction structures, methods of making the devices and method of using the devices.


Find Patent Forward Citations

Ma, Zhenqiang. (2014). Lattice mismatched heterojunction structures and devices made therefrom (U.S. Patent No. 8866154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8866154

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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