The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Mar. 20, 2012
Applicants:

Takao Noda, Himeji, JP;

Ryoichi Ohara, Himeji, JP;

Kenya Sano, Himeji, JP;

Toru Sugiyama, Musashino, JP;

Inventors:

Takao Noda, Himeji, JP;

Ryoichi Ohara, Himeji, JP;

Kenya Sano, Himeji, JP;

Toru Sugiyama, Musashino, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/43 (2006.01); H01L 29/06 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/43 (2013.01); H01L 29/872 (2013.01); H01L 29/6606 (2013.01); H01L 29/0619 (2013.01); H01L 21/0465 (2013.01); H01L 29/0692 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.


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