The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Apr. 15, 2010
Angelo Mascarenhas, Golden, CO (US);
Myles A. Steiner, Golden, CO (US);
Lekhnath Bhusal, Golden, CO (US);
Yong Zhang, Golden, CO (US);
Angelo Mascarenhas, Golden, CO (US);
Myles A. Steiner, Golden, CO (US);
Lekhnath Bhusal, Golden, CO (US);
Yong Zhang, Golden, CO (US);
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Abstract
A method () of fabricating an LED or the active regions of an LED and an LED (). The method includes growing, depositing or otherwise providing a bottom cladding layer () of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (). A first active layer () may be grown above the bottom cladding layer () wherein the first active layer () is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer () will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer () above the first active layer () where the second active layer () Is fabricated from the same semiconductor alloy.