The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Dec. 26, 2012
Lg Display Co., Ltd., Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A thin film transistor and a method for fabricating the same are disclosed. The thin film transistor includes: a gate electrode formed on a substrate and having a plurality of horizontal electrode parts spaced apart at regular intervals; a gate insulating film formed over the entire surface of the substrate including the gate electrode; an active pattern formed on the gate insulating film above the plurality of horizontal electrode parts; an etch stop film pattern formed above the active pattern and the gate insulating film so as to overlap top portions of the active pattern and the gate electrode and; a source electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of adjacent horizontal electrode parts; and a drain electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of horizontal electrode parts located on the outermost ends.