The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jul. 28, 2010
Ji-sim Jung, Incheon, KR;
Chang-seung Lee, Yongin-si, KR;
Jae-cheol Lee, Suwon-si, KR;
Sang-yoon Lee, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kwang-hee Lee, Suwon-si, KR;
Kyoung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Chang-seung Lee, Yongin-si, KR;
Jae-cheol Lee, Suwon-si, KR;
Sang-yoon Lee, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kwang-hee Lee, Suwon-si, KR;
Kyoung-seok Son, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.