The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
May. 22, 2012
Kentaro Fujiyoshi, Kumagaya, JP;
Chiori Mochizuki, Sagamihara, JP;
Minoru Watanabe, Honjo, JP;
Masato Ofuji, Honjo, JP;
Keigo Yokoyama, Honjo, JP;
Jun Kawanabe, Kodama-gun, JP;
Hiroshi Wayama, Honjo, JP;
Kentaro Fujiyoshi, Kumagaya, JP;
Chiori Mochizuki, Sagamihara, JP;
Minoru Watanabe, Honjo, JP;
Masato Ofuji, Honjo, JP;
Keigo Yokoyama, Honjo, JP;
Jun Kawanabe, Kodama-gun, JP;
Hiroshi Wayama, Honjo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.