The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Feb. 22, 2012
Applicants:
Serge Blonkowski, Meylan, FR;
Diana Lopez, Grenoble, FR;
Inventors:
Serge Blonkowski, Meylan, FR;
Diana Lopez, Grenoble, FR;
Assignees:
STMicroelectronics SA, Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 31/0392 (2006.01); H01L 31/0376 (2006.01); H01L 27/146 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 31/03921 (2013.01); H01L 31/03767 (2013.01); H01L 27/14679 (2013.01); H01L 27/14603 (2013.01); H01L 31/202 (2013.01); H01L 27/14692 (2013.01); H01L 27/1462 (2013.01); H01L 27/14665 (2013.01);
Abstract
A method is for measuring light energy received by a pixel including a transfer transistor, and a photodiode including a charge storage region. The method may include encapsulating the gate of the transfer transistor of the pixel in a semiconductor layer, at least one part of which includes a hydrogenated amorphous semiconductor. The method also may include grounding the charge storage region of the pixel, and determining the drift over time in the magnitude of the drain-source current of the transfer transistor.