The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Jul. 23, 2009
Applicants:

Takahiko Murata, Osaka, JP;

Takayoshi Yamada, Osaka, JP;

Yoshihisa Kato, Shiga, JP;

Shigetaka Kasuga, Osaka, JP;

Mitsuyoshi Mori, Kyoto, JP;

Inventors:

Takahiko Murata, Osaka, JP;

Takayoshi Yamada, Osaka, JP;

Yoshihisa Kato, Shiga, JP;

Shigetaka Kasuga, Osaka, JP;

Mitsuyoshi Mori, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/146 (2006.01); H04N 5/235 (2006.01); H04N 5/355 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H04N 5/2355 (2013.01); H04N 5/35572 (2013.01); H04N 5/3559 (2013.01);
Abstract

A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.


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